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ixtf02n450.pdf Principales características:

ixtf02n450ixtf02n450

Advance Technical Information High Voltage VDSS = 4500V IXTF02N450 Power MOSFET ID25 = 200mA RDS(on) 750 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25 C to 150 C 4500 V 5 VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V 1 = Gate 5 = Drain VGSM Transient 30 V 2 = Source ID25 TC = 25 C 200 mA IDM TC = 25 C, Pulse Width Limited by TJM 600 mA PD TC = 25 C78 W Features TJ - 55 ... +150 C TJM 150 C Silicon Chip on Direct-Copper Bond Tstg - 55 ... +150 C (DCB) Substrate TL 1.6mm (0.062 in.) from Case for 10s 300 C Isolated Mounting Surface TSOLD Plastic Body for 10s 260 C 4500V Electrical Isolation Molding Epoxies meet UL 94 V-0 FC Mounting Force 20..120 / 4.5..27 N/lb. Flammabil

 

Keywords - ALL TRANSISTORS. Principales características

 ixtf02n450.pdf Design, MOSFET, Power

 ixtf02n450.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixtf02n450.pdf Database, Innovation, IC, Electricity

 

 

 


 
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