2n5015sx.pdf Principales características:
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage 2N5010 500 Vdc 2N5011 600 Vdc 2N5012 700 Vdc VCER 2N5013 800 Vdc 2N5014 900 Vdc 2N5015 1000 Vdc TO-5 2N5010 thru 2N5015 Collector-Base Voltage 2N5010 500 Vdc 2N5011 600 Vdc 2N5012 700 Vdc VCBO 2N5013 800 Vdc 2N5014 900 Vdc 2N5015 1000 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current IC 200 mAdc Base Current IB 20 mAdc Total Power Dissipation TO-39 @ TA = +25 C Pt 1.0 W 2N5010S thr
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