2n4900x.pdf Principales características:
2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO 66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO 66 Metal Package. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless otherwise stated) 2N4898X 2N4899X 2N4900X V(BR)CBO Collector Base Breakdown Voltage 40V 60V 80V V(BR)CEO Collector Emitter Breakdown Voltage 40V 60V 80V V(BR)EBO Emitter Base Breakdown Voltage 5V IC Continuous Collector Current 4A IB Base Current 1A PD Total Power Dissipation 25W TC Operating Case Temperature Range 65 to +200 C Tstg Storage Temperature Range 65 to +200
Keywords - ALL TRANSISTORS. Principales características
2n4900x.pdf Design, MOSFET, Power
2n4900x.pdf RoHS Compliant, Service, Triacs, Semiconductor
2n4900x.pdf Database, Innovation, IC, Electricity
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