Todos los transistores

st13007d.pdf Principales características:

ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 oC TO-220 LARGE RBSOA APPLICATIONS UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS SWITCH MODE POWER SUPPLIES INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector-Emitter Voltage (VBE = -1.5V) 700 V VCEO

Keywords - ALL TRANSISTORS. Principales características

 st13007d.pdf Design, MOSFET, Power

 st13007d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 st13007d.pdf Database, Innovation, IC, Electricity