100DA025D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GB100DA60UPVishay SemiconductorsInsulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient Square RBSOA HEXFRED antiparallel diodes with ultrasoftreverse recovery Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline

APTGT100DA170D1 VCES = 1700V Boost chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application 3 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2- Low voltage drop 6- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 72

APTGF100DA120TVCES = 1200V Boost chopper IC = 100A @ Tc = 80CNPT IGBT Power ModuleApplication AC and DC motor control NTC2VBUSVBUS SENSE Switched Mode Power Supplies Power Factor Correction CR1Features Non Punch Through (NPT) FAST IGBT - Low voltage drop- Low tail current OUT- Switching frequency up to 50 kHz - Soft recovery parallel diodes

APTGT100DA120D1 VCES = 1200V Boost chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application AC and DC motor control 3 Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2- Low voltage drop 6- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 7-

APTM100DA18CT1GVDSS = 1000V Boost chopper RDSon = 180m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 40A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 8 MOSFETs 3NTC- Low RDSon 4Q2- Low input and Miller capacitance - Low gate charge