Справочник транзисторов. 100DA025D

 

Биполярный транзистор 100DA025D - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 100DA025D
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 300 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
   Макcимальный постоянный ток коллектора (Ic): 120 A
   Предельная температура PN-перехода (Tj): 200 °C
   Корпус транзистора: X240

 Аналоги (замена) для 100DA025D

 

 

100DA025D Datasheet (PDF)

 9.1. Size:180K  vishay
gb100da60up.pdf

100DA025D
100DA025D

GB100DA60UPVishay SemiconductorsInsulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient Square RBSOA HEXFRED antiparallel diodes with ultrasoftreverse recovery Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline

 9.2. Size:185K  apt
aptgt100da170d1.pdf

100DA025D
100DA025D

APTGT100DA170D1 VCES = 1700V Boost chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application 3 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2- Low voltage drop 6- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 72

 9.3. Size:293K  apt
aptgf100da120t.pdf

100DA025D
100DA025D

APTGF100DA120TVCES = 1200V Boost chopper IC = 100A @ Tc = 80CNPT IGBT Power ModuleApplication AC and DC motor control NTC2VBUSVBUS SENSE Switched Mode Power Supplies Power Factor Correction CR1Features Non Punch Through (NPT) FAST IGBT - Low voltage drop- Low tail current OUT- Switching frequency up to 50 kHz - Soft recovery parallel diodes

 9.4. Size:185K  apt
aptgt100da120d1.pdf

100DA025D
100DA025D

APTGT100DA120D1 VCES = 1200V Boost chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application AC and DC motor control 3 Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2- Low voltage drop 6- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 7-

 9.5. Size:197K  microsemi
aptm100da18ct1g.pdf

100DA025D
100DA025D

APTM100DA18CT1GVDSS = 1000V Boost chopper RDSon = 180m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 40A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 8 MOSFETs 3NTC- Low RDSon 4Q2- Low input and Miller capacitance - Low gate charge

Другие транзисторы... 100DA025D , 100T2 , 101NU70 , 102NU70 , 103NU70 , 104NU70 , 104T2 , 105NU70 , TIP41 , 1074GE , 107NU70 , 108T2 , 109T2 , 111T2 , 111T2-18 , 121-1003 , 121-1019 .

 

 
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