100DA025D datasheet, аналоги, основные параметры

Наименование производителя: 100DA025D  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 300 W

Макcимально допустимое напряжение коллектор-база (Ucb): 300 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V

Макcимальный постоянный ток коллектора (Ic): 120 A

Предельная температура PN-перехода (Tj): 200 °C

Электрические характеристики

Корпус транзистора: X240

  📄📄 Копировать 

 Аналоги (замена) для 100DA025D

- подборⓘ биполярного транзистора по параметрам

 

100DA025D даташит

 9.1. Size:180K  vishay
gb100da60up.pdfpdf_icon

100DA025D

GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline

 9.2. Size:185K  apt
aptgt100da170d1.pdfpdf_icon

100DA025D

APTGT100DA170D1 VCES = 1700V Boost chopper IC = 100A @ Tc = 80 C Trench IGBT Power Module Application 3 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2 - Low voltage drop 6 - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 7 2

 9.3. Size:293K  apt
aptgf100da120t.pdfpdf_icon

100DA025D

APTGF100DA120T VCES = 1200V Boost chopper IC = 100A @ Tc = 80 C NPT IGBT Power Module Application AC and DC motor control NTC2 VBUS VBUS SENSE Switched Mode Power Supplies Power Factor Correction CR1 Features Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current OUT - Switching frequency up to 50 kHz - Soft recovery parallel diodes

 9.4. Size:185K  apt
aptgt100da120d1.pdfpdf_icon

100DA025D

APTGT100DA120D1 VCES = 1200V Boost chopper IC = 100A @ Tc = 80 C Trench IGBT Power Module Application AC and DC motor control 3 Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2 - Low voltage drop 6 - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 7 -

Другие транзисторы: BD333, 100T2, 101NU70, 102NU70, 103NU70, 104NU70, 104T2, 105NU70, 106NU70