2SB435. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB435 datasheet

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2SB435 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD235 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W Junc

..2. Size:211K inchange semiconductor
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isc Silicon PNP Power Transistor 2SB435 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -1A CE(sat) C Complement to Type 2SD235 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

9.1. Size:196K inchange semiconductor
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isc Silicon PNP Power Transistor 2SB434 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.2V(Max.) @I = -3A CE(sat) C Complement to Type 2SD234 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

Otros transistores... 2SB432 , 2SB433 , 2SB433F , 2SB434 , 2SB434G , 2SB434O , 2SB434R , 2SB434Y , C5198 , 2SB435G , 2SB435O , 2SB435R , 2SB435Y , 2SB436 , 2SB437 , 2SB438 , 2SB439 .