2SB436 Todos los transistores

 

2SB436 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB436
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.12 W
   Tensión colector-base (Vcb): 25 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.12 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO1

 Búsqueda de reemplazo de transistor bipolar 2SB436

 

2SB436 Datasheet (PDF)

 9.1. Size:69K  wingshing
2sb435.pdf

2SB436

2SB435 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD235ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W Junc

 9.2. Size:196K  inchange semiconductor
2sb434.pdf

2SB436
2SB436

isc Silicon PNP Power Transistor 2SB434DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.2V(Max.) @I = -3ACE(sat) CComplement to Type 2SD234Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

 9.3. Size:211K  inchange semiconductor
2sb435.pdf

2SB436
2SB436

isc Silicon PNP Power Transistor 2SB435DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -1ACE(sat) CComplement to Type 2SD235Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

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