2SB52. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB52 datasheet

0.1. Size:183K inchange semiconductor
2sb521.pdf pdf_icon

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB521 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.4V(Max.) @I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATI

0.2. Size:167K inchange semiconductor
2sb522.pdf pdf_icon

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB522 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.4V(Max.) @I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATI

0.3. Size:217K inchange semiconductor
2sb526.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB526 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

0.4. Size:178K inchange semiconductor
2sb520.pdf pdf_icon

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB520 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -140V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -7A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a

Otros transistores... 2SB515F , 2SB516 , 2SB518 , 2SB518-1 , 2SB518-2 , 2SB519 , 2SB519-1 , 2SB519-2 , 2SC2655 , 2SB520 , 2SB520-1 , 2SB520-2 , 2SB521 , 2SB521-1 , 2SB521-2 , 2SB522 , 2SB522-1 .