2SB537 Datasheet. Equivalente

 ..1. Size:189K  inchange semiconductor
 2sb537.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB537 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -2.0(Max.) @I = -1A CE(sat) C Complement to Type 2SD382 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier, low speed

 9.1. Size:36K  no
 2sb531.pdf

 9.2. Size:158K  jmnic
 2sb536.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION With TO-220C package Complement to type 2SD381 Low collector saturation voltage APPLICATIONS Audio frequency power amplifier Low speed power switching PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base A

 9.3. Size:163K  inchange semiconductor
 2sb538.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB538 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -65V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -2.0V(Max.) @I = -10A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier application

 9.4. Size:207K  inchange semiconductor
 2sb532.pdf

isc Silicon PNP Power Transistors 2SB532 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co

 9.5. Size:213K  inchange semiconductor
 2sb539.pdf

isc Silicon PNP Power Transistors 2SB539 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD287 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. Recommended for 70 80W

 9.6. Size:204K  inchange semiconductor
 2sb536.pdf

 9.7. Size:212K  inchange semiconductor
 2sb531.pdf

isc Silicon PNP Power Transistors 2SB531 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 50W(Max)@T =25 C C Complement to Type 2SD371 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 9.8. Size:162K  inchange semiconductor
 2sb530.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB530 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -110V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a