2SB539A Todos los transistores

isc Silicon PNP Power Transistors 2SB539 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD287 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. Recommended for 70 80W

JMnic Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION With TO-220C package Complement to type 2SD381 Low collector saturation voltage APPLICATIONS Audio frequency power amplifier Low speed power switching PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base A

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB538 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -65V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -2.0V(Max.) @I = -10A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier application

isc Silicon PNP Power Transistors 2SB532 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co

isc Silicon PNP Power Transistors 2SB531 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 50W(Max)@T =25 C C Complement to Type 2SD371 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB530 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -110V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB537 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -2.0(Max.) @I = -1A CE(sat) C Complement to Type 2SD382 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier, low speed