2SB549 Todos los transistores

DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiators ABSOLUTE MAXIMUM RATINGS (Ta = 25

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB549 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO With TO-126 package Complement to Type 2SD415 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

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JMnic Product Specification Silicon PNP Power Transistors 2SB548 DESCRIPTION With TO-126 package Complement to type 2SD414 APPLICATIONS Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

JMnic Product Specification Silicon PNP Power Transistors 2SB546A DESCRIPTION With TO-220C package Complement to type 2SD401A Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simpli

JMnic Product Specification Silicon PNP Power Transistors 2SB546 DESCRIPTION With TO-220C package Complement to type 2SD401 Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplifi

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB548 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO With TO-126 package Complement to Type 2SD414 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon PNP Power Transistor 2SB546A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD401A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical deflection of complement

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB547 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD402 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical def

isc Silicon PNP Power Transistors 2SB541 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. Suitable for output sta

isc Silicon PNP Power Transistor 2SB546 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD401 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical deflection of complementar