2SB557S Todos los transistores

JMnic Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION With TO-3 package Complement to type 2SD427 High power dissipation APPLICATIONS Power amplifier applications Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col

isc Silicon PNP Power Transistors 2SB557 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SD427 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 50W high-fidelity audio

JMnic Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION With TO-3 package Complement to type 2SD425/426 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3)

JMnic Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION With TO-3 package Complement to type 2SD424 High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITION

JMnic Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION With TO-220C package Complement to type 2SD553 Low collector saturation voltage APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3

JMnic Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION With TO-3 package Complement to type 2SD552 APPLICATIONS Power amplifier applications Power switching applications DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PAR

isc Silicon PNP Power Transistors 2SB555 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SD425 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 80W high-fidelity audio

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION With TO-3 package Complement to type 2SD425/426 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi

isc Silicon PNP Power Transistors 2SB556 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD426 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 80W high-fidelity audio

isc Silicon PNP Power Transistor 2SB554 DESCRIPTION High Power Dissipation- P = 150W@T = 25 C C High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Complement to Type 2SD424 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier ,DC-DC converter and regulator applications. ABSOLUTE M

isc Silicon PNP Power Transistor 2SB553 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -4A CE(sat) C Complement to Type 2SD553 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB550 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -70V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max.)@I = -5A CE(sat) C With TO-66 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and swit

isc Silicon PNP Power Transistors 2SB558 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SD428 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 40W high-fidelity audio

isc Silicon PNP Power Transistors 2SB552 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO High Power Dissipation- P = 150W(Max)@T =25 C C Complement to Type 2SD552 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High power switching applications. DC-DC con

isc Silicon PNP Power Transistors 2SB551 DESCRIPTION Low Collector Saturation Voltage- V = -1.2V(Typ.)@I = -2A CE(sat) C High Power Dissipation- P = 25W(Max)@T =55 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR