2SB558 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistors 2SB558DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SD428Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 40W high-fidelity audio

JMnic Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION With TO-3 package Complement to type 2SD425/426 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3)

JMnic Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION With TO-3 package Complement to type 2SD424 High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION

JMnic Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION With TO-3 package Complement to type 2SD427 High power dissipation APPLICATIONS Power amplifier applications Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Col

JMnic Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION With TO-220C package Complement to type 2SD553 Low collector saturation voltage APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3

JMnic Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION With TO-3 package Complement to type 2SD552 APPLICATIONS Power amplifier applications Power switching applications DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PAR

isc Silicon PNP Power Transistors 2SB555DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SD425Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 80W high-fidelity audio

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION With TO-3 package Complement to type 2SD425/426 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi

isc Silicon PNP Power Transistors 2SB556DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD426Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 80W high-fidelity audio

isc Silicon PNP Power Transistor 2SB554DESCRIPTIONHigh Power Dissipation-: P = 150W@T = 25C CHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SD424Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier ,DC-DC converter and regulatorapplications.ABSOLUTE M

isc Silicon PNP Power Transistors 2SB557DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SD427Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 50W high-fidelity audio

isc Silicon PNP Power Transistor 2SB553DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -4ACE(sat) CComplement to Type 2SD553Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB550DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -70V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max.)@I = -5ACE(sat) CWith TO-66 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers andswit

isc Silicon PNP Power Transistors 2SB552DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CComplement to Type 2SD552Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High power switching applications.DC-DC con

isc Silicon PNP Power Transistors 2SB551DESCRIPTIONLow Collector Saturation Voltage-: V = -1.2V(Typ.)@I = -2ACE(sat) CHigh Power Dissipation-: P = 25W(Max)@T =55C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR