2SB566A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB566A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 70 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 8 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar 2SB566A

2SB566A Datasheet (PDF)

..1. Size:257K jmnic
2sb566 2sb566a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

..2. Size:150K inchange semiconductor
2sb566 2sb566a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol

8.1. Size:33K hitachi
2sb566.pdf

2SB566(K), 2SB566A(K)Silicon PNP Triple DiffusedApplicationLow frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB566(K) 2SB566A(K) UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage V

8.2. Size:218K inchange semiconductor
2sb566.pdf

isc Silicon PNP Power Transistor 2SB566DESCRIPTIONLow Collector Saturation Voltage:V = -1.0(V)(Max)@I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOComplement to Type 2SD476Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applica

8.3. Size:150K inchange semiconductor
2sb566-a.pdf