2SB566AK Todos los transistores

 

2SB566AK Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB566AK

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO220

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2SB566AK datasheet

 7.1. Size:257K  jmnic
2sb566 2sb566a.pdf pdf_icon

2SB566AK

JMnic Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin

 7.2. Size:150K  inchange semiconductor
2sb566 2sb566a.pdf pdf_icon

2SB566AK

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol

 8.1. Size:33K  hitachi
2sb566.pdf pdf_icon

2SB566AK

2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB566(K) 2SB566A(K) Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage V

 8.2. Size:218K  inchange semiconductor
2sb566.pdf pdf_icon

2SB566AK

isc Silicon PNP Power Transistor 2SB566 DESCRIPTION Low Collector Saturation Voltage V = -1.0(V)(Max)@I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Complement to Type 2SD476 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applica

Otros transistores... 2SB561 , 2SB562 , 2SB563 , 2SB564 , 2SB565 , 2SB565A , 2SB566 , 2SB566A , B772 , 2SB566B , 2SB566C , 2SB566K , 2SB567 , 2SB568 , 2SB569 , 2SB56A , 2SB57 .

 

 

 


 
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