2SB612A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB612A

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 35

Encapsulados: TO3

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2SB612A datasheet

 8.1. Size:211K  inchange semiconductor
 2sb612.pdf pdf_icon

2SB612A

isc Silicon PNP Power Transistors 2SB612 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD582 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommended for 80 100W audio amplifier output stage. ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:178K  inchange semiconductor
 2sb611.pdf pdf_icon

2SB612A

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB611 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -110V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a

 9.2. Size:207K  inchange semiconductor
 2sb613.pdf pdf_icon

2SB612A

isc Silicon PNP Power Transistors 2SB613 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -250V(Min) (BR)CEO High Power Dissipation- P = 150W(Max)@T =25 C C High Current Capability Complement to Type 2SD583 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applicatio

 9.3. Size:189K  inchange semiconductor
 2sb616.pdf pdf_icon

2SB612A

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB616 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -100V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -2A CE(sat) C With TO-3PN package Complement to Type 2SD586 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amp

MOSTRAR MÁS

Otros transistores... 2SB608A, 2SB609, 2SB609A, 2SB60A, 2SB61, 2SB611, 2SB611A, 2SB612, C1815, 2SB613, 2SB615, 2SB616, 2SB616A, 2SB617, 2SB617A, 2SB618, 2SB618A