All Transistors. 2SB612A Datasheet

 

2SB612A Datasheet and Replacement


   Type Designator: 2SB612A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO3
 

 2SB612A Substitution

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2SB612A Datasheet (PDF)

 8.1. Size:211K  inchange semiconductor
 2sb612.pdf pdf_icon

2SB612A

isc Silicon PNP Power Transistors 2SB612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD582Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommended for 80~100W audio amplifier output stage.ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:178K  inchange semiconductor
 2sb611.pdf pdf_icon

2SB612A

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB611DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

 9.2. Size:207K  inchange semiconductor
 2sb613.pdf pdf_icon

2SB612A

isc Silicon PNP Power Transistors 2SB613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SD583Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applicatio

 9.3. Size:189K  inchange semiconductor
 2sb616.pdf pdf_icon

2SB612A

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB616DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -100V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWith TO-3PN packageComplement to Type 2SD586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amp

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Datasheet: 2SB608A , 2SB609 , 2SB609A , 2SB60A , 2SB61 , 2SB611 , 2SB611A , 2SB612 , 2N2222 , 2SB613 , 2SB615 , 2SB616 , 2SB616A , 2SB617 , 2SB617A , 2SB618 , 2SB618A .

History: 2SB1072S | 2SC3303O | 2N1892 | BCW49C | NKT405 | BD792 | 2SD2123SC

Keywords - 2SB612A transistor datasheet

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