2SB631KF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB631KF

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 8 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 55 MHz

Capacitancia de salida (Cc): 60 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: TO126

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2SB631KF datasheet

 7.1. Size:220K  jmnic
 2sb631 2sb631k.pdf pdf_icon

2SB631KF

JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

 7.2. Size:358K  lzg
 2sb631k 3ca631k.pdf pdf_icon

2SB631KF

2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency power amplifier,medium speed switching applications . , 2SD600K(3DA600K) Features High V ,high current,low saturation voltage and good linearity of h compleme

 7.3. Size:178K  inchange semiconductor
 2sb631 2sb631k.pdf pdf_icon

2SB631KF

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collecto

 7.4. Size:213K  inchange semiconductor
 2sb631k.pdf pdf_icon

2SB631KF

isc Silicon PNP Power Transistor 2SB631K DESCRIPTION High Collector Current-I =-1.0A C High Collector-Emitter Breakdown Voltage- V =-120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD600K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM

MOSTRAR MÁS

Otros transistores... 2SB630, 2SB631, 2SB631D, 2SB631E, 2SB631F, 2SB631K, 2SB631KD, 2SB631KE, 2SA1837, 2SB632, 2SB632D, 2SB632E, 2SB632F, 2SB632K, 2SB632KD, 2SB632KE, 2SB632KF