2SB644 Todos los transistores

Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Unit mm Complementary to 2SD638 and 2SD639 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. Absolute Maximum Ratings (Ta=25 C) 0.85 Parameter Symbol Ratings Unit

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SB647L Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667 Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Transistor Lead Free Finish/Rohs Complian

2SB647(A)-B MCC Micro Commercial Components TM 2SB647(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB647-D Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Plastic-Encapsulate Collector-current -1.0A

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SB647L Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667 Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Transistor Lead Free Finish/Rohs Complian

2SB647(A)-B MCC Micro Commercial Components TM 2SB647(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB647-D Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Plastic-Encapsulate Collector-current -1.0A

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SB647L Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667 Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Transistor Lead Free Finish/Rohs Complian

2SB647(A)-B MCC Micro Commercial Components TM 2SB647(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB647-D Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Plastic-Encapsulate Collector-current -1.0A

Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter

Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter

Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Unit mm Complementary to 2SD638 and 2SD639 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. Absolute Maximum Ratings (Ta=25 C) 0.85 Parameter Symbol Ratings Unit

UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL APPLICATION * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB647L-x-T9N-B 2SB647G-x-T9N-B TO-92NL E C B Tape Box 2SB647L-x-T9N-K 2SB647G-x-T9N-K TO-92NL E C B Bulk www.unisonic.com.tw 1 of 4

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS 1 * Low frequency power amplifier complementary pair with UTC 1 2SD669/A TO-252 TO-92 1 1 TO-126 TO-92NL 1 1 TO-126S TO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB649 2SB649A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base v

2SB647, 2SB647A Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SB647 2SB647A Unit Collector to base voltage VCBO 120 120 V Collector to emitter voltage VCEO 80 100 V Emitter to base volt

2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 3.2 0.2 8.0 0.2 FEATURES 2.0 0.2 4.14 0.1 O2.8 0.1 O3.2 0.1 Power smplifier applications 11.0 0.2 1.4 0.1 1 2 3 Power dissipation PCM 1 W Tamb=25 1.27 0.1 Collector current 15.3

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 2SB647 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES Low Frequency Power Amplifier 3. BASE Complementary Pair with 2SD667 Equivalent Circuit B647=Device code B647 Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors J C T TO 92M TO 92MOD 2SB647/2SB647A TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES 2. COLLECTOR Low Frequency Power Amplifier 3. EMITTER Complementary Pair with 2SD667/A 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Va

JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO -120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected t

JMnic Product Specification Silicon PNP Power Transistors 2SB645 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.500 7.400 2.900 1.100 Symbol Parameter Value Units 7.800 1.500 VCBO Collector-Base Voltage -180 V 3.900 3.000 4.100 VCEO Collector-Emitter Voltage 3

2SB649/2SB649A TO-126C Transistor (PNP) TO-126C 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -180 V 3.000 7.800 3.400 8.200 1.800 VCEO Collector-Emitter Voltage 2.200 4.040 2SB649 -120 V

2SB647 / 2SB647A PNP General Purpose Transistors 2 P b Lead(Pb)-Free 1 3 2 3 1.EMITTER 3.BASE 2.COLLECTOR 1 TO-92MOD MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage 80 VCEO V VCBO Collector-Base Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1000 mA Total Device Dissipation PD 900 mW TA=25 C Tj C Junc

2SB649/2SB649A PNP Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol 2SB649 2SB649A Unit VCBO -180 V Collector-Emitter Voltage VCEO -120 -160 V Collector-Base Voltage VEBO Emitter-Base Voltage 6.0 V Collector Current IC -1.5 A PD 1.0 W Power Disspation Tj +150 C Junction Temp

2SB649TA(BR3CA649TA) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 2SD669TA(BR3DA669TA) Complementary pair with 2SD669TA(BR3DA669TA). / Applications Low frequency power amplifier. / Equivalen

2SB649AD Rev.A May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features 2SD669AD Complementary pair with 2SD669AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni

2SB649(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features 2SD669(A) Complementary pair with 2SD669(A). / Applications Low frequency power amplifier. / Equivalent Circuit / Pin

2SB647(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features 2SD667(A) Complementary pair with 2SD667(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P

RoHS RoHS 2SB649AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose PNP Power Transistor -1.5A / -120V, -160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SD669AM/2SD669AM-A PNP E All dimensions in millimeter

RoHS RoHS 2SB649AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose PNP Power Transistor -1.5A / -120V, -160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SD669AM/2SD669AM-A PNP E All dimensions in millimeter

2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR , 2SD667(3DG667)/2SD667A(3DG667A) Purpose Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO -120 V 2SB647 -80

2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR , 2SD667(3DG667)/2SD667A(3DG667A) Purpose Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO -120 V 2SB647 -80

2SB649(3CA649) 2SB649A(3CA649A) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier. 2SD669(3DA669)/2SD669A(3DA669A) Features Complementary pair with 2SD669(3DA669)/2SD669A(3DA669A). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -180 V CBO

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB647 TRANSISTOR (PNP) SOT-89-3L FEATURE Power dissipation 1. BASE PCM 0.9 W (Tamb=25 ) 2. COLLECTOR 1 Collector current 2 ICM -1 A 3. EMITTER 3 Collector-base voltage V(BR)CBO 120 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELE

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB649A DESCRIPTION High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- V(BR)CEO=-160V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669A APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME

isc Silicon PNP Power Transistors 2SB645 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO High Power Dissipation- P = 150W(Max)@T =25 C C Complement to Type 2SD665 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 200W high-fidelity audi

isc Silicon PNP Power Transistor 2SB649 DESCRIPTION High Collector Current-I =-1.5A C High Collector-Emitter Breakdown Voltage- V =-120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RA