2SB649A Todos los transistores

 

2SB649A Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB649A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 160 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 27 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO126
 

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2SB649A datasheet

 ..1. Size:293K  utc
2sb649 2sb649a.pdf pdf_icon

2SB649A

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS 1 * Low frequency power amplifier complementary pair with UTC 1 2SD669/A TO-252 TO-92 1 1 TO-126 TO-92NL 1 1 TO-126S TO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3... See More ⇒

 ..2. Size:35K  hitachi
2sb649a.pdf pdf_icon

2SB649A

2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB649 2SB649A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base v... See More ⇒

 ..3. Size:280K  jiangsu
2sb649 2sb649a.pdf pdf_icon

2SB649A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit... See More ⇒

 ..4. Size:199K  jmnic
2sb649 2sb649a.pdf pdf_icon

2SB649A

JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO -120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected t... See More ⇒

Otros transistores... 2SB648 , 2SB648A , 2SB648AB , 2SB648AC , 2SB648B , 2SB648C , 2SB648D , 2SB649 , 431 , 2SB649AB , 2SB649AC , 2SB649B , 2SB649C , 2SB649D , 2SB65 , 2SB650 , 2SB650H .

 

 
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