2SB65 Todos los transistores

 

2SB65 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB65

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.4 MHz

Capacitancia de salida (Cc): 70 pF

Ganancia de corriente contínua (hFE): 65

Encapsulados: TO1

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2SB65 datasheet

 0.1. Size:356K  jmnic
2sb656.pdf pdf_icon

2SB65

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB656 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll

 0.2. Size:211K  inchange semiconductor
2sb655.pdf pdf_icon

2SB65

isc Silicon PNP Power Transistors 2SB655 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD675 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 0.3. Size:211K  inchange semiconductor
2sb653.pdf pdf_icon

2SB65

isc Silicon PNP Power Transistors 2SB653 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SD673 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =

 0.4. Size:211K  inchange semiconductor
2sb654.pdf pdf_icon

2SB65

isc Silicon PNP Power Transistors 2SB654 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SD674 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =

Otros transistores... 2SB648D , 2SB649 , 2SB649A , 2SB649AB , 2SB649AC , 2SB649B , 2SB649C , 2SB649D , TIP120 , 2SB650 , 2SB650H , 2SB653 , 2SB653A , 2SB654 , 2SB654A , 2SB655 , 2SB655A .

History: 2SB758A | 2SB757

 

 

 


History: 2SB758A | 2SB757

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