All Transistors. 2SB65 Datasheet

 

2SB65 Datasheet and Replacement


   Type Designator: 2SB65
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 0.4 MHz
   Collector Capacitance (Cc): 70 pF
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: TO1
 

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2SB65 Datasheet (PDF)

 0.1. Size:356K  jmnic
 2sb656.pdf pdf_icon

2SB65

Product Specification www.jmnic.comSilicon PNP Power Transistors 2SB656 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Coll

 0.2. Size:211K  inchange semiconductor
 2sb655.pdf pdf_icon

2SB65

isc Silicon PNP Power Transistors 2SB655DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD675Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 0.3. Size:211K  inchange semiconductor
 2sb653.pdf pdf_icon

2SB65

isc Silicon PNP Power Transistors 2SB653DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SD673Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

 0.4. Size:211K  inchange semiconductor
 2sb654.pdf pdf_icon

2SB65

isc Silicon PNP Power Transistors 2SB654DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SD674Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: AC127 | 1129NTV1

Keywords - 2SB65 transistor datasheet

 2SB65 cross reference
 2SB65 equivalent finder
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