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2SB650 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB650
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10000
   Paquete / Cubierta: TO3
 

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2SB650 Datasheet (PDF)

 9.1. Size:356K  jmnic
 2sb656.pdf pdf_icon

2SB650

Product Specification www.jmnic.comSilicon PNP Power Transistors 2SB656 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Coll

 9.2. Size:211K  inchange semiconductor
 2sb655.pdf pdf_icon

2SB650

isc Silicon PNP Power Transistors 2SB655DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD675Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 9.3. Size:211K  inchange semiconductor
 2sb653.pdf pdf_icon

2SB650

isc Silicon PNP Power Transistors 2SB653DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SD673Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

 9.4. Size:211K  inchange semiconductor
 2sb654.pdf pdf_icon

2SB650

isc Silicon PNP Power Transistors 2SB654DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SD674Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

MOSTRAR MÁS

Otros transistores... 2SB649 , 2SB649A , 2SB649AB , 2SB649AC , 2SB649B , 2SB649C , 2SB649D , 2SB65 , 2SD882 , 2SB650H , 2SB653 , 2SB653A , 2SB654 , 2SB654A , 2SB655 , 2SB655A , 2SB656 .

 

 
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