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2SB650 Specs and Replacement


   Type Designator: 2SB650
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: TO3

 2SB650 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB650 detailed specifications

 9.1. Size:356K  jmnic
 2sb656.pdf pdf_icon

2SB650

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB656 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll... See More ⇒

 9.2. Size:211K  inchange semiconductor
 2sb655.pdf pdf_icon

2SB650

isc Silicon PNP Power Transistors 2SB655 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD675 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

 9.3. Size:211K  inchange semiconductor
 2sb653.pdf pdf_icon

2SB650

isc Silicon PNP Power Transistors 2SB653 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SD673 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

 9.4. Size:211K  inchange semiconductor
 2sb654.pdf pdf_icon

2SB650

isc Silicon PNP Power Transistors 2SB654 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SD674 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

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Detailed specifications: 2SB649 , 2SB649A , 2SB649AB , 2SB649AC , 2SB649B , 2SB649C , 2SB649D , 2SB65 , B647 , 2SB650H , 2SB653 , 2SB653A , 2SB654 , 2SB654A , 2SB655 , 2SB655A , 2SB656 .

Keywords - 2SB650 transistor specs

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