2SB656
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB656
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125
W
Tensión colector-base (Vcb): 160
V
Tensión colector-emisor (Vce): 120
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SB656
2SB656
Datasheet (PDF)
..1. Size:356K jmnic
2sb656.pdf 
Product Specification www.jmnic.comSilicon PNP Power Transistors 2SB656 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Coll
..2. Size:211K inchange semiconductor
2sb656.pdf
isc Silicon PNP Power Transistors 2SB656DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOHigh Power Dissipation-: P = 125W(Max)@T =25C CComplement to Type 2SD676Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T
9.1. Size:211K inchange semiconductor
2sb655.pdf
isc Silicon PNP Power Transistors 2SB655DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD675Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T
9.2. Size:211K inchange semiconductor
2sb653.pdf
isc Silicon PNP Power Transistors 2SB653DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SD673Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =
9.3. Size:211K inchange semiconductor
2sb654.pdf
isc Silicon PNP Power Transistors 2SB654DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SD674Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =
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