2SB656A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB656A  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 35

Encapsulados: TO3

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2SB656A datasheet

 8.1. Size:356K  jmnic
 2sb656.pdf pdf_icon

2SB656A

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB656 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll

 8.2. Size:211K  inchange semiconductor
 2sb656.pdf pdf_icon

2SB656A

isc Silicon PNP Power Transistors 2SB656 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation- P = 125W(Max)@T =25 C C Complement to Type 2SD676 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:211K  inchange semiconductor
 2sb655.pdf pdf_icon

2SB656A

isc Silicon PNP Power Transistors 2SB655 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD675 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 9.2. Size:211K  inchange semiconductor
 2sb653.pdf pdf_icon

2SB656A

isc Silicon PNP Power Transistors 2SB653 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SD673 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =

MOSTRAR MÁS

Otros transistores... 2SB650H, 2SB653, 2SB653A, 2SB654, 2SB654A, 2SB655, 2SB655A, 2SB656, BD139, 2SB66, 2SB668, 2SB668A, 2SB669, 2SB669A, 2SB66H, 2SB67, 2SB670