2SB656A Todos los transistores

 

2SB656A Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB656A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SB656A

 

Principales características: 2SB656A

 8.1. Size:356K  jmnic
 2sb656.pdf pdf_icon

2SB656A

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB656 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll

 8.2. Size:211K  inchange semiconductor
 2sb656.pdf pdf_icon

2SB656A

isc Silicon PNP Power Transistors 2SB656 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation- P = 125W(Max)@T =25 C C Complement to Type 2SD676 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:211K  inchange semiconductor
 2sb655.pdf pdf_icon

2SB656A

isc Silicon PNP Power Transistors 2SB655 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD675 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 9.2. Size:211K  inchange semiconductor
 2sb653.pdf pdf_icon

2SB656A

isc Silicon PNP Power Transistors 2SB653 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SD673 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =

MOSTRAR MÁS

Otros transistores... 2SB650H , 2SB653 , 2SB653A , 2SB654 , 2SB654A , 2SB655 , 2SB655A , 2SB656 , BD139 , 2SB66 , 2SB668 , 2SB668A , 2SB669 , 2SB669A , 2SB66H , 2SB67 , 2SB670 .

 

 
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