2SB68 Datasheet. Equivalente

 0.1. Size:77K  utc
 2sb688.pdf

UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -120 V Collector-Emi

 0.2. Size:114K  mospec
 2sb688.pdf

A A A

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 2sb689.pdf

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 2sb682.pdf

 0.5. Size:29K  wingshing
 2sb688.pdf

2SB688 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SD716 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collect

 0.6. Size:200K  jmnic
 2sb686.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB686 DESCRIPTION With TO-3P(I) package Complement to type 2SD716 APPLICATIONS Power amplifier applications Recommend for 30 35W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

 0.7. Size:207K  jmnic
 2sb688.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB688 DESCRIPTION With TO-3P(I) package Complement to type 2SD718 APPLICATIONS Power amplifier applications Recommend for 45 50W audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Abs

 0.8. Size:789K  jilin sino
 2sb688.pdf

PNP PNP Epitaxial Silicon Transistor R NPN 2SB688 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =110V (min) High collector voltage V =110V (min) CEO CEO V =180V (min) V =180V (min) CEO CEO 2SD718 Complementary to 2S

 0.9. Size:231K  first silicon
 2sb688 to3p.pdf

SEMICONDUCTOR 2SB688 TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V

 0.10. Size:289K  lzg
 2sb688 3ca688.pdf

2SB688(3CA688) PNP /SILICON PNP TRANSISTOR Purpose Designed for use in general-purpose amplifier and switching application. 45-50W 2SD718(3DA718) Features Recommend for 45-50W audio frequency amplifier output stage, Complementary to 2SD718(3DA718). /Absolut

 0.11. Size:196K  cn sptech
 2sb688r 2sb688o.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD718 APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 0.12. Size:208K  inchange semiconductor
 2sb681.pdf

isc Silicon PNP Power Transistor 2SB681 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For AF power amplifier use. Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 0.13. Size:76K  inchange semiconductor
 2sb680.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB680 DESCRIPTION High Power Dissipation- PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min.) Complement to Type 2SC1080 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC

 0.14. Size:213K  inchange semiconductor
 2sb689.pdf

isc Silicon PNP Power Transistor 2SB689 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATING

 0.15. Size:219K  inchange semiconductor
 2sb686.pdf

isc Silicon PNP Power Transistor 2SB686 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD716 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 30 35W high-fidelity audio frequency amplifier output stage. ABSOLUTE

 0.16. Size:218K  inchange semiconductor
 2sb683.pdf

isc Silicon PNP Power Transistor 2SB683 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 0.17. Size:218K  inchange semiconductor
 2sb682.pdf

isc Silicon PNP Power Transistor 2SB682 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 0.18. Size:223K  inchange semiconductor
 2sb688.pdf

isc Silicon PNP Power Transistor 2SB688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD718 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applicat