2SB696 Todos los transistores

 

2SB696 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB696
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 150 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 7.5 MHz
   Ganancia de corriente contínua (hfe): 320
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SB696

 

2SB696 Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
2sb696.pdf

2SB696
2SB696

isc Silicon PNP Power Transistors 2SB696DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD732Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.Recommended for output stage of 60W

 9.1. Size:136K  jmnic
2sb697 2sb697k.pdf

2SB696
2SB696

JMnic Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION With TO-3 package Complement to type 2SD733/733K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-

 9.2. Size:218K  inchange semiconductor
2sb690.pdf

2SB696
2SB696

isc Silicon PNP Power Transistor 2SB690DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SD726Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.3. Size:211K  inchange semiconductor
2sb697.pdf

2SB696
2SB696

isc Silicon PNP Power Transistors 2SB697DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD733Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.Recommended for output stage of 80W

 9.4. Size:123K  inchange semiconductor
2sb697-k.pdf

2SB696
2SB696

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION With TO-3 package Complement to type 2SD733/733K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simpli

 9.5. Size:215K  inchange semiconductor
2sb695.pdf

2SB696
2SB696

isc Silicon PNP Power Transistor 2SB695DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD731Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATI

 9.6. Size:215K  inchange semiconductor
2sb691.pdf

2SB696
2SB696

isc Silicon PNP Power Transistor 2SB691DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD727Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE

 9.7. Size:216K  inchange semiconductor
2sb692.pdf

2SB696
2SB696

isc Silicon PNP Power Transistor 2SB692DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD728Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUT

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History: 2SB709 | FTC2690A

 

 
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History: 2SB709 | FTC2690A

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