2SB713 Todos los transistores

JMnic Product Specification Silicon PNP Power Transistors 2SB713 DESCRIPTION With TO-3PN package Wide area of safe operation Excellent good linearity of hFE APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(T

isc Silicon PNP Power Transistor 2SB713 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SD751 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier use. ABSOLUTE MAXIMUM RATINGS(T =25 )

Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit mm 0.40+0.10 For general amplification 0.05 0.16+0.10 0.06 3 Complementary to 2SD0602 and 2SD0602A Features Large collector current IC 1 2 Mini type package, allowing downsizing of the equipment and (0.95) (0.95) automatic insertion through the tape packing and the magazine 1.9 0.1 2.90+0.20

Transistor 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD602 and 2SD602A +0.2 2.8 0.3 Features +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Large collector current IC. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum

2SB715, 2SB716, 2SB716A Silicon PNP Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SD755, 2SD756 and 2SD756A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB715, 2SB716, 2SB716A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SB715 2SB716 2SB716A Unit Collector to base voltage VCBO 100 120 140 V Collector to em

SMD Type Transistors PNP Transistors 2SB710 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-0.5A 1 2 Collector Emitter Voltage VCEO=-25V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Complementary to 2SD602 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors PNP Transistors 2SB710A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Large collector current IC Complimentary to 2SD602A. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Volt

CHENMKO ENTERPRISE CO.,LTD 2SB717GP SURFACE MOUNT PNP Silicon Power Transistor VOLTAGE 12 Volts CURRENT 3 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Peak pulse current 10A * Extremely low saturation voltage SC-62/SOT-89 * PC= 2.0 W * Extremely low equivalent On-resistance CONSTRUCTION 4.6MAX. 1.6MAX. * PNP Switching Transistor 1.7MAX. 0.4+0.05 +0.08 0.45-0.05 +0.

isc Silicon PNP Power Transistor 2SB719 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD759 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=2