2SB736 Todos los transistores

 

2SB736 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB736
   Código: BW1_BW2_BW3_BW4_BW5
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 13 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: TO236

 Búsqueda de reemplazo de transistor bipolar 2SB736

 

2SB736 Datasheet (PDF)

 ..1. Size:183K  nec
2sb736 2sb736 2sb736a.pdf

2SB736
2SB736

 ..2. Size:1127K  kexin
2sb736.pdf

2SB736
2SB736

SMD Type TransistorsPNP Transistors2SB736SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 High DC current gain hFE:200(TYP) Complimentary to 2SD780.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter V

 0.1. Size:1155K  kexin
2sb736a.pdf

2SB736
2SB736

SMD Type TransistorsPNP Transistors2SB736ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 High DC current gain hFE:200(TYP) Complimentary to 2SD780A.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter

 9.1. Size:166K  nec
2sb734.pdf

2SB736
2SB736

 9.2. Size:164K  nec
2sb733.pdf

2SB736
2SB736

 9.3. Size:1246K  rohm
2sb737 2sb821.pdf

2SB736
2SB736

 9.4. Size:31K  hitachi
2sb738 2sb739.pdf

2SB736
2SB736

2SB738, 2SB739Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD787 and 2SD788OutlineTO-92MOD1. Emitter2. Collector3. Base3212SB738, 2SB739Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SB738 2SB739 UnitCollector to base voltage VCBO 20 20 VCollector to emitter voltage VCEO 16 20 VEmitter to base v

 9.5. Size:39K  no
2sb731.pdf

2SB736

 9.6. Size:187K  inchange semiconductor
2sb731.pdf

2SB736
2SB736

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB731DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = -50V(Min)CEO(SUS)Low Collector to Emitter Saturation Voltage: V = -0.6V(Max.)@I = -1ACE(sat) CDC Current Gain-: h = 135-600@I = -0.1AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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