2SB736 Todos los transistores

SMD Type Transistors PNP Transistors 2SB736 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High DC current gain hFE 200(TYP) Complimentary to 2SD780. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter V

SMD Type Transistors PNP Transistors 2SB736A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High DC current gain hFE 200(TYP) Complimentary to 2SD780A. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter

2SB738, 2SB739 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD787 and 2SD788 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SB738 2SB739 Unit Collector to base voltage VCBO 20 20 V Collector to emitter voltage VCEO 16 20 V Emitter to base v

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB731 DESCRIPTION Collector-Emitter Sustaining Voltage - V = -50V(Min) CEO(SUS) Low Collector to Emitter Saturation Voltage V = -0.6V(Max.)@I = -1A CE(sat) C DC Current Gain- h = 135-600@I = -0.1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo