2SB766 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SB766, 2SB766ASilicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD874 and 2SD874AFeatures Large collector power dissipation PC. 1.5 0.14.5 0.11.6 0.2 Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.45Absolute Maximu

Transistor2SB766, 2SB766ASilicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD874 and 2SD874AFeatures Large collector power dissipation PC. 1.5 0.14.5 0.11.6 0.2 Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.45Absolute Maximu

2SB766PNP Silicon Elektronische BauelementeMedium Power TransistorRoHS Compliant ProductDD1ASOT-89b1FEATURES b Power dissipation Ce e1 P : 500mW Tamb=25 CM1.BASE Collector current 2.COLLECTOR Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min Max: -1 AICM3.EMITTERA 1.400 1.600 0.055 0.063 Collector-base voltage b 0.

2SB7 66 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Large collector power dissipation PC 2. COLLECTOR 1 Complementary to 2SD874 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A

2SB766SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.81.41.43. EMITTER 3 2.64.252.43.75Features 0.8MIN Large collector power dissipation PC 0.530.400.480.442x)0.13 B Complementary to 2SD874 0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parame

FM120-MWILLASTHRU2SB766 SOT-89 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProdPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTRANSI

SMD Type TransistorsPNP Transistors2SB766 Features 1.70 0.1 Large collector power dissipation PC Complimentary to 2SD874.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 Collector Current -

UNISONIC TECHNOLOGIES CO., LTD 2SB766A PNP SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION FEATURES * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Haloge

2SB766A PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89FEATURES Large collector power dissipation PC AC Complementary to 2SD874A DCollectorPACKAGE INFORMATION BaseWeight: 0.05 g (approximately) ILH GEmitterMillimeter Millimeter

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB766A TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Large collector power dissipation PC 1 Complementary to 2SD874A 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 V VCEO Collec

2SB7 66A TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 2. COLLECTOR 1 Large collector power dissipation PC 2 Complementary to 2SD874A 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A

2SB766A SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.42 1.63. EMITTER 1.81.41.43 2.64.252.43.75Features 0.8MINLarge collector power dissipation PC 0.530.400.480.442x)0.13 B0.35 Complementary to 2SD874A 0.371.53.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Par

2SB766APNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123SOT-89MAXIMUM RATINGS (TA=25 unless otherwise noted)ParameterSymbol UnitsValueCollector-Base Voltage VCBO -60VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -1ACollector Power dissipation PC mW500Junction Tempera

FM120-M WILLASTHRU2SB766ASOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HTRANSISTOR(PNP) urface mounted application in order to

SMD Type TransistorsPNP Transistors2SB766A Features 1.70 0.1 Large collector power dissipation PC Complimentary to 2SD874A.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current