2SB766 - Даташиты. Аналоги. Основные параметры

Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD874 and 2SD874A Features Large collector power dissipation PC. 1.5 0.1 4.5 0.1 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 Absolute Maximu

Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD874 and 2SD874A Features Large collector power dissipation PC. 1.5 0.1 4.5 0.1 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 Absolute Maximu

2SB766 PNP Silicon Elektronische Bauelemente Medium Power Transistor RoHS Compliant Product D D1 A SOT-89 b1 FEATURES b Power dissipation C e e1 P 500mW Tamb=25 CM 1.BASE Collector current 2.COLLECTOR Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max -1 A ICM 3.EMITTER A 1.400 1.600 0.055 0.063 Collector-base voltage b 0.

2SB7 66 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Large collector power dissipation PC 2. COLLECTOR 1 Complementary to 2SD874 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A

2SB766 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Large collector power dissipation PC 0.53 0.40 0.48 0.44 2x) 0.13 B Complementary to 2SD874 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parame

FM120-M WILLAS THRU 2SB766 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to TRANSI

SMD Type Transistors PNP Transistors 2SB766 Features 1.70 0.1 Large collector power dissipation PC Complimentary to 2SD874. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 Collector Current -

UNISONIC TECHNOLOGIES CO., LTD 2SB766A PNP SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION FEATURES * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Haloge

2SB766A PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Large collector power dissipation PC A C Complementary to 2SD874A D Collector PACKAGE INFORMATION Base Weight 0.05 g (approximately) I L H G Emitter Millimeter Millimeter

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB766A TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Large collector power dissipation PC 1 Complementary to 2SD874A 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collec

2SB7 66A TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 2. COLLECTOR 1 Large collector power dissipation PC 2 Complementary to 2SD874A 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A

2SB766A SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 3. EMITTER 1.8 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Large collector power dissipation PC 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Complementary to 2SD874A 0.37 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Par

2SB766A PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Units Value Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1 A Collector Power dissipation PC mW 500 Junction Tempera

SMD Type Transistors PNP Transistors 2SB766A Features 1.70 0.1 Large collector power dissipation PC Complimentary to 2SD874A. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current