2SB776E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 2SB776 PNP PLANAR TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High Current Output Up to 3A * Low Saturation Voltage * Complement to 2SD886 ORDERING INFORMATION Ordering N

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB776 TRANSISTOR (PNP) TO-126 FEATURES High Current Output Up to 3A 1. EMITTER Low Saturation Voltage Power Dissipation 2. COLLECTOR 3. BASE Equivalent Circuit B776=Device code Solid dot = Green molding compound device, if none, the normal device B776 XX XX=Code

JMnic Product Specification Silicon PNP Power Transistors 2SB776 DESCRIPTION With TO-3PN package Complement to type 2SD896 Wide area of safe operation APPLICATIONS 100V/7A, AF 40W output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25 )

2SB776(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High current output up to 3A Low saturation voltage Power dissipation 2.500 7.400 2.900 1.100 7.800 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted ) 3.900 Symbol Parameter Value Units 3.000 4.100 VCBO Collector-Base Voltage -50 V 10.600 3.200 0.000 0.300 VCEO Collec

2SB776 2SD886 2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors TO-126 1.EMITTER P b Lead(Pb)-Free 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/2SB776 Unit NPN/2SD886 VCEO -50 50 V Collector-Emitter Voltage VCBO -50 50 V Collector-Base Voltage VEBO -5.0 5.0 V Emitter-Base Voltage IC -3.0 3.0 A Collector Curren