2SB776E Todos los transistores

 

2SB776E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB776E
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8 MHz
   Capacitancia de salida (Cc): 200 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO218

 Búsqueda de reemplazo de transistor bipolar 2SB776E

 

2SB776E Datasheet (PDF)

 8.1. Size:201K  utc
2sb776.pdf

2SB776E
2SB776E

UNISONIC TECHNOLOGIES CO., LTD 2SB776 PNP PLANAR TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High Current Output Up to 3A * Low Saturation Voltage * Complement to 2SD886 ORDERING INFORMATION Ordering N

 8.2. Size:260K  jiangsu
2sb776.pdf

2SB776E
2SB776E

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors2SB776 TRANSISTOR (PNP)TO-126FEATURES High Current Output Up to 3A 1. EMITTER Low Saturation Voltage Power Dissipation 2. COLLECTOR3. BASE Equivalent Circuit B776=Device code Solid dot = Green molding compound device, if none, the normal device B776 XXXX=Code

 8.3. Size:209K  jmnic
2sb776.pdf

2SB776E
2SB776E

JMnic Product Specification Silicon PNP Power Transistors 2SB776 DESCRIPTION With TO-3PN package Complement to type 2SD896 Wide area of safe operation APPLICATIONS 100V/7A, AF 40W output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Tc=25)

 8.4. Size:164K  lge
2sb776.pdf

2SB776E
2SB776E

2SB776(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High current output up to 3A Low saturation voltage Power dissipation 2.5007.4002.9001.1007.8001.500MAXIMUM RATINGS (TA=25 unless otherwise noted ) 3.900Symbol Parameter Value Units3.0004.100VCBO Collector-Base Voltage -50 V 10.600 3.2000.0000.300VCEO Collec

 8.5. Size:170K  wietron
2sb776 2sd886.pdf

2SB776E
2SB776E

2SB7762SD8862SB776 PNP Epitaxial Planar Transistors2SD886 NPN Epitaxial Planar TransistorsTO-1261.EMITTERP b Lead(Pb)-Free2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB776 UnitNPN/2SD886VCEO -50 50 VCollector-Emitter VoltageVCBO -50 50 VCollector-Base VoltageVEBO -5.0 5.0 VEmitter-Base VoltageIC -3.0 3.0 ACollector Curren

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA1392 | 2SA1475

 

 
Back to Top

 


History: 2SA1392 | 2SA1475

2SB776E
  2SB776E
  2SB776E
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top