2SB817E Todos los transistores

 ..1. Size:196K  cn sptech
 2sb817d 2sb817e.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB817 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047 APPLICATIONS Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 ..2. Size:195K  inchange semiconductor
 2sb817e.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB817E DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency

 8.1. Size:30K  sanyo
 2sb817p 2sd1047p 2sd1047p.pdf

Ordering number ENN6572 2SB817P / 2SD1047P 2SB817P PNP Epitaxial Planar Silicon Transistor 2SD1047P NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P

 8.2. Size:199K  jmnic
 2sb817.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB817 DESCRIPTION With TO-3PN package Complement to type 2SD1047 APPLICATIONS 140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS

 8.3. Size:445K  sanken-ele
 2sb817c 2sd1047c.pdf

Ordering number ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0

 8.4. Size:195K  inchange semiconductor
 2sb817c.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB817C DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max.) @I = -5A CE(sat) C Good Linearity of h FE High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier output stage a

 8.5. Size:222K  inchange semiconductor
 2sb817.pdf

isc Silicon PNP Power Transistor 2SB817 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage