2SB827R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB827R

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO218

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2SB827R datasheet

 8.1. Size:102K  sanyo
 2sb827 2sd1063.pdf pdf_icon

2SB827R

Ordering number 688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions Universal high current switching as solenoid driving, unit mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.4V max. Wide ASO. 1 Base 2 Co

 8.2. Size:241K  jmnic
 2sb827.pdf pdf_icon

2SB827R

JMnic Product Specification Silicon PNP Power Transistors 2SB827 DESCRIPTION With TO-3PN package Complement to type 2SD1063 Wide area of safe operation Low collector-emitter saturation voltage VCE(sat)=( )0.4V max. APPLICATIONS Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base Col

 8.3. Size:221K  inchange semiconductor
 2sb827.pdf pdf_icon

2SB827R

isc Silicon PNP Power Transistor 2SB827 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.4V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1063 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Universal high current switching as solenoid driving, high speed i

MOSTRAR MÁS

Otros transistores... 2SB825R, 2SB825S, 2SB826, 2SB826Q, 2SB826R, 2SB826S, 2SB827, 2SB827Q, 2SC2383, 2SB827S, 2SB828, 2SB828Q, 2SB828R, 2SB828S, 2SB829, 2SB829Q, 2SB829R