2SB827R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB827R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO218
2SB827R Transistor Equivalent Substitute - Cross-Reference Search
2SB827R Datasheet (PDF)
2sb827 2sd1063.pdf
Ordering number:688HPNP/NPN Epitaxial Planar Silicon Tranasistors2SB827/2SD106350V/7A Switching ApplicationsaApplications Package Dimensions Universal high current switching as solenoid driving,unit:mmhigh speed inverter and converter.2022A[2SB827/2SD1063]Features Low collector-to-emitter saturation voltage : VCE(sat)=()0.4V max. Wide ASO.1 : Base2 : Co
2sb827.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB827 DESCRIPTION With TO-3PN package Complement to type 2SD1063 Wide area of safe operation Low collector-emitter saturation voltage : VCE(sat)=()0.4V max. APPLICATIONS Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION1 Base Col
2sb827.pdf
isc Silicon PNP Power Transistor 2SB827DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -0.4V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1063Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUniversal high current switching as solenoid driving, highspeed i
Datasheet: 2SB825R , 2SB825S , 2SB826 , 2SB826Q , 2SB826R , 2SB826S , 2SB827 , 2SB827Q , D667 , 2SB827S , 2SB828 , 2SB828Q , 2SB828R , 2SB828S , 2SB829 , 2SB829Q , 2SB829R .
