2SB828R Todos los transistores

 

2SB828R Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB828R
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO218
 

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2SB828R datasheet

 8.1. Size:98K  sanyo
 2sb828.pdf pdf_icon

2SB828R

 8.2. Size:213K  jmnic
 2sb828.pdf pdf_icon

2SB828R

JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION With TO-3PN package Complement to type 2SD1064 Low collector saturation voltage Wide area of safe operation APPLICATIONS Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2

 8.3. Size:220K  inchange semiconductor
 2sb828.pdf pdf_icon

2SB828R

isc Silicon PNP Power Transistor 2SB828 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters, and o

MOSTRAR MÁS

Otros transistores... 2SB826R , 2SB826S , 2SB827 , 2SB827Q , 2SB827R , 2SB827S , 2SB828 , 2SB828Q , MPSA42 , 2SB828S , 2SB829 , 2SB829Q , 2SB829R , 2SB829T , 2SB83 , 2SB830 , 2SB831 .

History: 40279

 

 

 


 
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