2SB858B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB857 2SB858 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base

JMnic Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll

isc Silicon PNP Power Transistor 2SB858 DESCRIPTION Collector Current I = -4A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -2A CE(sat) C High Collector Power Dissipation Complement to Type 2SD1134 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M