2SB87
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB87
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 80
V
Tensión emisor-base (Veb): 60
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 90
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.1
MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SB87
2SB87
Datasheet (PDF)
0.1. Size:41K panasonic
2sb873 e.pdf 
Transistor2SB873Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector
0.2. Size:37K panasonic
2sb873.pdf
Transistor2SB873Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector
0.3. Size:156K jmnic
2sb870.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION With TO-220C package Complement to type 2SD866 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol
0.4. Size:216K inchange semiconductor
2sb871.pdf
isc Silicon PNP Power Transistor 2SB871DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -20V(Min)(BR)CEOHigh Speed SwitchingLow Collector Saturation Voltage: V = -0.6V(Max)@I = -10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T
0.5. Size:219K inchange semiconductor
2sb870.pdf
isc Silicon PNP Power Transistor 2SB870DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25
0.6. Size:217K inchange semiconductor
2sb874.pdf
isc Silicon PNP Power Transistor 2SB874DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage: V = -1.0V(Max)@I = -1.5ACE(sat) CComplement to Type 2SD1177Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA
Otros transistores... 2N3200
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.
