Справочник транзисторов. 2SB87

 

Биполярный транзистор 2SB87 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB87
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 60 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 90 °C
   Граничная частота коэффициента передачи тока (ft): 0.1 MHz
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO3

 Аналоги (замена) для 2SB87

 

 

2SB87 Datasheet (PDF)

 0.1. Size:41K  panasonic
2sb873 e.pdf

2SB87
2SB87

Transistor2SB873Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector

 0.2. Size:37K  panasonic
2sb873.pdf

2SB87
2SB87

Transistor2SB873Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.9 0.2 4.9 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector

 0.3. Size:156K  jmnic
2sb870.pdf

2SB87
2SB87

JMnic Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION With TO-220C package Complement to type 2SD866 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

 0.4. Size:216K  inchange semiconductor
2sb871.pdf

2SB87
2SB87

isc Silicon PNP Power Transistor 2SB871DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -20V(Min)(BR)CEOHigh Speed SwitchingLow Collector Saturation Voltage: V = -0.6V(Max)@I = -10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T

 0.5. Size:219K  inchange semiconductor
2sb870.pdf

2SB87
2SB87

isc Silicon PNP Power Transistor 2SB870DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25

 0.6. Size:217K  inchange semiconductor
2sb874.pdf

2SB87
2SB87

isc Silicon PNP Power Transistor 2SB874DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage: V = -1.0V(Max)@I = -1.5ACE(sat) CComplement to Type 2SD1177Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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