2SB874 Datasheet. Equivalente

 ..1. Size:217K  inchange semiconductor
 2sb874.pdf

isc Silicon PNP Power Transistor 2SB874 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage V = -1.0V(Max)@I = -1.5A CE(sat) C Complement to Type 2SD1177 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MA

 9.1. Size:41K  panasonic
 2sb873 e.pdf

Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm For DC-DC converter 5.9 0.2 4.9 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector

 9.2. Size:37K  panasonic
 2sb873.pdf

Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm For DC-DC converter 5.9 0.2 4.9 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector

 9.3. Size:156K  jmnic
 2sb870.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION With TO-220C package Complement to type 2SD866 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

 9.4. Size:216K  inchange semiconductor
 2sb871.pdf

isc Silicon PNP Power Transistor 2SB871 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -20V(Min) (BR)CEO High Speed Switching Low Collector Saturation Voltage V = -0.6V(Max)@I = -10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T

 9.5. Size:219K  inchange semiconductor
 2sb870.pdf

isc Silicon PNP Power Transistor 2SB870 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = -0.5V(Max)@I = -5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25