All Transistors. 2SB874 Datasheet

 

2SB874 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB874

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 125 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO126

2SB874 Transistor Equivalent Substitute - Cross-Reference Search

 

2SB874 Datasheet (PDF)

5.1. 2sb873 e.pdf Size:41K _panasonic

2SB874
2SB874

Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm For DC-DC converter 5.9± 0.2 4.9± 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7± 0.1 2.54± 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitte

5.2. 2sb873.pdf Size:37K _panasonic

2SB874
2SB874

Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm For DC-DC converter 5.9± 0.2 4.9± 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7± 0.1 2.54± 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitte

5.3. 2sb870.pdf Size:156K _jmnic

2SB874
2SB874

JMnic Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD866 ·Low collector saturation voltage ·High collector current capability APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 B

5.4. 2sb871.pdf Size:273K _inchange_semiconductor

2SB874
2SB874

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB871 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·High Speed Switching ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -10A APPLICATIONS ·Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

5.5. 2sb870.pdf Size:123K _inchange_semiconductor

2SB874
2SB874

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD866 ·Low collector saturation voltage ·High collector current capability APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220

Datasheet: 2SB869 , 2SB87 , 2SB870 , 2SB871 , 2SB871A , 2SB872 , 2SB872A , 2SB873 , 2N5088 , 2SB874B , 2SB874C , 2SB875 , 2SB876 , 2SB877 , 2SB878 , 2SB879 , 2SB88 .

 


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