2SB893E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB893E
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75 W
Tensión colector-base (Vcb): 20 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 140 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 70 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SB893E
2SB893E Datasheet (PDF)
2sb893.pdf
Ordering number:1023CPNP Epitaxial Planar Silicon Transistor2SB893Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, strobes. unit:mm2003AFeatures [2SB893] Low saturation voltage : VCE(sat)0.45V (IC=1.5A, IB=0.15A). Large current capacity and wide ASO : IC max=2.5A.JEDEC : TO-92 B : Base
2sb892.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L 2SB892 TRANSISTOR (PNP) 1. EMITTER FEATURE Power Supplies, Relay Drivers, Lamp Drivers, 2. COLLECTOR and Automotive Wiring 3. BASE Low Saturation Voltage. Large Current Capacity and Wide ASO. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parame
2sb892.pdf
2SB892 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.7005.1001Features7.8008.200 Power supplies, relay drivers, lamp drivers, 0.6000.800and automotive wiring 0.350Low saturation voltage. 0.55013.80014.200 Large current capacity and wide ASO. Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwis
2sb892 to-92mod.pdf
2SB892 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features Power supplies, relay drivers, lamp drivers, 8.4008.800and automotive wiring 0.9001.100 Low saturation voltage. 0.400 Large current capacity and wide ASO. 0.60013.80014.2001.500 TYP2.900Dimensions in inches and (millimeters)MAXIMUM RATINGS* TA=
2sb892 3ca892.pdf
2SB892(3CA892) PNP /SILICON PNP TRANSISTOR :,,/Purpose:Power supplies,relay drivers, lamp drivers,and automotive wiring. :,/Features:Low saturation voltage,large current capacity. /Absolute maximum ratings(Ta=25) Symbol Rating Unit VC
2sb896.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB896DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -40V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -0.6(Max.) @I = -7ACE(sat) CHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage s
2sb896-a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB896 2SB896A DESCRIPTION With TO-220C package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAME
2sb891f.pdf
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F DESCRIPTION With TO-126 package Complement to type 2SD1189F Low collector saturation voltage APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL
2sb899.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB899DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -50V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.2(Max.) @I = -3ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and
2sb898.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB898DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -50V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.2(Max.) @I = -3ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and
2sb897.pdf
isc Silicon PNP Darlington Power Transistor 2SB897DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -10AFE CLow Collector Saturation Voltage-: V = -1.5V(Max.) @I = 10ACE(sat) CComplement to Type 2SD1210Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high
2sb891.pdf
isc Silicon PNP Power Transistor 2SB891DESCRIPTIONHigh Collector Current -I = -2ACGood Linearity of hFELow Collector Saturation VoltageComplement to Type 2SD1189Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stage of audio amplifier,voltage regulator,DC-DC converter and relay driver.AB
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
