2SC2636S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2636S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 900 MHz
Capacitancia de salida (Cc): 0.8 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: SC71
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2SC2636S datasheet
7.2. Size:59K panasonic
2sc2636 e.pdf 
Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Paramete
8.3. Size:38K panasonic
2sc2631 e.pdf
Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1123 5.0 0.2 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2
8.4. Size:42K panasonic
2sc2634 e.pdf
Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1127 5.0 0.2 4.0 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to
8.5. Size:38K panasonic
2sc2634.pdf
Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1127 5.0 0.2 4.0 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to
8.6. Size:34K panasonic
2sc2631.pdf
Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1123 5.0 0.2 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2
8.7. Size:34K panasonic
2sc2632.pdf
Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1124 5.9 0.2 4.9 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Sy
8.8. Size:38K panasonic
2sc2632 e.pdf
Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1124 5.9 0.2 4.9 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Sy
Otros transistores... 2SB905S, 2SB906, 2SB906O, 2SB906Y, 2SB907, 2SB908, 2SB909M, 2SB91, BC327, 2SB911M, 2SB912, 2SB913, 2SB914, 2SB915, 2SB916, 2SB917, 2SB918
