Биполярный транзистор 2SC2636S
Даташит. Аналоги
Наименование производителя: 2SC2636S
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.4
W
Макcимально допустимое напряжение коллектор-база (Ucb): 30
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3
V
Макcимальный постоянный ток коллектора (Ic): 0.05
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 900
MHz
Ёмкость коллекторного перехода (Cc): 0.8
pf
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора:
SC71
Аналог (замена) для 2SC2636S
-
подбор ⓘ биполярного транзистора по параметрам
2SC2636S
Datasheet (PDF)
7.2. Size:59K panasonic
2sc2636 e.pdf 
Transistor2SC2636Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Paramete
8.3. Size:38K panasonic
2sc2631 e.pdf 
Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2
8.4. Size:42K panasonic
2sc2634 e.pdf 
Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to
8.5. Size:38K panasonic
2sc2634.pdf 
Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to
8.6. Size:34K panasonic
2sc2631.pdf 
Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2
8.7. Size:34K panasonic
2sc2632.pdf 
Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy
8.8. Size:38K panasonic
2sc2632 e.pdf 
Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy
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History: 40410
| JE9016I
| PMBTA92
| 2SD1439
