2SB923 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor 2SB923 DESCRIPTION High Collector Current I = -20A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -10A CE(sat) C Complement to Type 2SD1239 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high- speed inverters, converters applic

Ordering number ENN1429A 2SB922 / 2SD1238 PNP / NPN Epitaxial Planar Silicon Transistors 2SB922 / 2SD1238 Large Current Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2022A [2SB922 / 2SD1238] Features 15.6 3.2 4.8 14.0 2.0 Low collector-to-emitter saturation voltage VCE(s

Power Transistors 2SB928, 2SB928A Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A 1.5max. 1.1max. Features High collector to emitter VCEO 0.8 0.1 0.5max. High collector power dissipation PC 2.54 0.3 N type package enabling direct soldering of the

Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 For power amplification Complementary to 2SD1252 and 2SD1252A Features 1.5max. 1.1max. High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.8 0.1 0.5max. N type package enabling direct solder

SMD Type Transistors PNP Transistors 2SB928A TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High collector-emitter voltage (Base open) VCEO High collector power dissipation PC Complementary to 2SD1250A 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum

SMD Type Transistors PNP Transistors 2SB929A TO-252 Unit mm Features +0.15 High forward current transfer ratio hFE 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1252A 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2

SMD Type Transistors PNP Transistors 2SB928 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High collector-emitter voltage (Base open) VCEO High collector power dissipation PC Complementary to 2SD1250 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum R

SMD Type Transistors PNP Transistors 2SB929 TO-252 Unit mm Features +0.15 High forward current transfer ratio hFE 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1252 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 C

isc Silicon PNP Power Transistor 2SB924 DESCRIPTION Wide Safety Operation Area Low Collector Saturation Voltage V = -0.5V(Max)@I = -12A CE(sat) C Complement to Type 2SD1240 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high- speed inverters, converters applications. A

isc Silicon PNP Power Transistor 2SB922 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -6A CE(sat) C Complement to Type 2SD1238 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high- speed inverters, converters applica

isc Silicon PNP Power Transistor 2SB925 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.6V(Max)@I = -5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

isc Silicon PNP Power Transistor 2SB921 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -4A CE(sat) C Complement to Type 2SD1237 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P