2SB942A Todos los transistores

 

2SB942A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB942A

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220

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2SB942A datasheet

 ..1. Size:192K  jmnic
2sb942 2sb942a.pdf pdf_icon

2SB942A

JMnic Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outl

 ..2. Size:151K  inchange semiconductor
2sb942 2sb942a.pdf pdf_icon

2SB942A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.

 8.1. Size:47K  panasonic
2sb942.pdf pdf_icon

2SB942A

Power Transistors 2SB942, 2SB942A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A Unit mm Features 10.0 0.2 4.2 0.2 High forward current transfer ratio hFE which has satisfactory linearity 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink

 8.2. Size:218K  inchange semiconductor
2sb942.pdf pdf_icon

2SB942A

isc Silicon PNP Power Transistor 2SB942 DESCRIPTION Low Collector Saturation Voltage- V = -1.5V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1267 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

Otros transistores... 2SB939 , 2SB939A , 2SB94 , 2SB940 , 2SB940A , 2SB941 , 2SB941A , 2SB942 , 2N2222 , 2SB943 , 2SB944 , 2SB945 , 2SB946 , 2SB947 , 2SB947A , 2SB948 , 2SB948A .

History: 2SA1037KLN | NTE48 | 2SB160

 

 

 


History: 2SA1037KLN | NTE48 | 2SB160

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