2SB942A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB942A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SB942A
2SB942A
Datasheet (PDF)
..1. Size:192K jmnic
2sb942 2sb942a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outl
..2. Size:151K inchange semiconductor
2sb942 2sb942a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.
8.1. Size:47K panasonic
2sb942.pdf
Power Transistors2SB942, 2SB942ASilicon PNP epitaxial planar typeFor low-frequency power amplificationComplementary to 2SD1267 and 2SD1267AUnit: mmFeatures10.0 0.2 4.2 0.2High forward current transfer ratio hFE which has satisfactory linearity5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink
8.2. Size:218K inchange semiconductor
2sb942.pdf
isc Silicon PNP Power Transistor 2SB942DESCRIPTIONLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1267Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
8.3. Size:151K inchange semiconductor
2sb942-a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.
Otros transistores... 2SA1803O
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