All Transistors. 2SB942A Datasheet

 

2SB942A Datasheet and Replacement


   Type Designator: 2SB942A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220
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2SB942A Datasheet (PDF)

 ..1. Size:192K  jmnic
2sb942 2sb942a.pdf pdf_icon

2SB942A

JMnic Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outl

 ..2. Size:151K  inchange semiconductor
2sb942 2sb942a.pdf pdf_icon

2SB942A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.

 8.1. Size:47K  panasonic
2sb942.pdf pdf_icon

2SB942A

Power Transistors2SB942, 2SB942ASilicon PNP epitaxial planar typeFor low-frequency power amplificationComplementary to 2SD1267 and 2SD1267AUnit: mmFeatures10.0 0.2 4.2 0.2High forward current transfer ratio hFE which has satisfactory linearity5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink

 8.2. Size:218K  inchange semiconductor
2sb942.pdf pdf_icon

2SB942A

isc Silicon PNP Power Transistor 2SB942DESCRIPTIONLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1267Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2711 | 2N3439CSM4 | CTP3551 | 2N5811 | BT2944 | 2N81 | 2SC679

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