2SB976 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SB976Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 27

Transistor2SB976Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 27

Transistor2SB970Silicon PNP epitaxial planer typeFor low-voltage output amplificationUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15Low collector to emitter saturation voltage VCE(sat).Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings

SMD Type TransistorsPNP Transistors2SB970SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 Low collector to emitter saturation voltage VCE(sat). For low-voltage output amplification1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2SB975DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -3AFE CLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD1309Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power

isc Silicon PNP Power Transistor 2SB979DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2SB974DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -2AFE CLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -2ACE(sat) CComplement to Type 2SD1308Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB975 DESCRIPTION With TO-220 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYM